Sonoluminescence and sonochemical reactions in cavitation fields. A review

Contemporary ideas on the nature of cavitation are reviewed in this paper. The general theories of sonoluminescence and sonochemical reactions, the origin, stability and splitting of cavitation bubbles, the dynamics of cavitation field evolution, the peculiarities of cavitation effects at low intensity and low-frequency acoustic oscillations, the sonoluminescence quenching effect and some questions on the energetics of cavitation fields are discussed. The electrical theory of the splitting of cavitation bubbles may, as shown in the paper, become an alternative to the thermal theories of cavitation in the future.     

Ejection of massive black holes from galaxies

Gravitational recoil of a gigantic black hole (M∼10^8–9 M_⊙) formed in the nonspherical collapse of the nuclear part of a typical galaxy can take place with an appreciable speed as a consequence of the anisotropic emission of gravitational radiation. Accretion of gaseous matter during its flight through the galaxy results in the formation of a glowing shock front. The accompanying stellar captures can lead to the formation of an accretion disk-star system about the hole. Consequently, the hole can become “luminous” enough to be observable after it emerges out of the galaxy. The phenomenon seems to have an importance in relation to the observations of quasar-galaxy association in a number of cases.     

Non-linear behaviour and stability of trapped micron-sized cylindrical gas bubbles in an ultrasonic field

Stable arrays of cylindrical bubbles with diameters 3 and 4 μm were produced by trapping air in the pores of hydrophobic Nuclepore filters. These bubble arrays were irradiated by beams of cw and pulsed ultrasound at carrier frequencies near the resonance frequencies of the trapped bubbles. By examining the frequency spectrum of the field scattered by the arrays it was found that the bubbles may oscillate as non-linear stable cavities of long duration. Using short pulses, the bubbles remain stable up to excitation pressure amplitudes of several bars. Mechanisms for the eventual growth and decay of the bubbles are discussed in light of the observations.     

Analysis of the magnetic bubble collapse method

In the bubble collapse technique the domain wall mobility is evaluated by measuring the shortest time for which a magnetic bubble collapses. The way in which this evaluation should be carried out is discussed.     

含铝炸药水下爆炸性能的实验研究

对RS211、HL-1、HL-2这3种含铝炸药和TNT炸药进行了水下爆炸实验,测量了4种炸药水下爆炸冲击波压力剖面和气泡脉动周期,获得了4种炸药水下爆炸冲击波的峰值超压、冲量、能量和气泡能。实验结果表明,在所研究的范围内,与TNT炸药相比,含铝炸药的冲击波能量有明显增加,约为TNT炸药的1.20～1.35倍,气泡能有显著增加,约为TNT炸药的1.50～2.30倍,表明在炸药中加入铝粉对于提高炸药水中爆炸威力是有益的。     

炸药水下爆炸能量输出特性试验研究

为了解炸药水中爆炸能量的输出特性,特别是冲击波能随距离的衰减规律,对有效比冲能进行了研究。经过理论推导发现,传统的有效比冲能计算公式仍然满足相似律。TNT炸药水下爆炸试验结果表明,炸药的有效比冲能、比气泡能和总能量的测量结果与经验公式计算结果吻合较好。通过对试验结果进行分析,拟合得到了有效比冲能随距离变化的趋势线。对比经验公式结果,发现在小药量试验中冲击波能随距离的衰减更明显。     

Effects of SiNx on two-dimensional electron gas and current collapse of A1GaN/GaN high electron mobility transistors

SiNx is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiNx films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

含气量对空泡脉动特性影响的理论研究

分析了含气量对粘性液体中球形单空泡脉动特性的影响。研究结果表明：随着泡内初始含气量的增加,空泡达到最大泡半径的时间延长;空泡膨胀的最大泡半径、收缩的最小泡半径和脉动周期均随初始含气量的增加而增加;同时,空泡膨胀和溃灭时泡壁的运动速度均随空泡初始含气量的变化而变化。无论含气量如何,在空泡收缩到最小泡半径附近,泡壁运动速度（收缩或膨胀）要明显快于其在最大泡半径附近;此外,受液体粘性影响,空泡膨胀和收缩过程明显变缓。     

Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

SiN_x is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN_x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN_x films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated AlGaN/GaN high electron mobility transistors.It finds that higher thickness SiNx passivation can significantly improve the high-electric-field reliability of a device.The degradation mechanism of the SiNx passivation layer under ON-state stress has also been discussed in detail.Under the ON-state stress,the strong electric-field led to degradation of SiNx passivation located in the gate-drain region.As the thickness of SiNx passivation increases,the density of the surface state will be increased to some extent.Meanwhile,it is found that the high NH 3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.